FDP3672
FDP3672 is N-Channel MOSFET manufactured by Fairchild Semiconductor.
- N-Channel Power Trench® MOSFET
November 2013
N-Channel Power Trench® MOSFET
105 V, 41 A, 33 mΩ
Features
- RDS(on) = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A
- QG(tot) = 28 n C ( Typ.) @ VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- Optimized Efficiency at High Frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
Applications
- Consumer Appliances
- Synchronous Rectification
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
Formerly developmental type 82760
TO-220
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGS
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC = 25o C, VGS = 10V) Continuous (TC = 100o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, RθJA = 62o C/W) Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25o C
TJ, TSTG Operating and Storage...
