Datasheet4U Logo Datasheet4U.com

FDP3672 - N-Channel MOSFET

Key Features

  • RDS(on) = 25 mΩ ( Typ. ) @ VGS = 10 V, ID = 41 A.
  • QG(tot) = 28 nC ( Typ. ) @ VGS = 10 V.
  • Low Miller Charge.
  • Low Qrr Body Diode.
  • Optimized Efficiency at High Frequencies.
  • UIS Capability (Single Pulse and Repetitive Pulse).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDP3672 N-Channel MOSFET INCHANGE
FDP3632 100V 80A N-Channel MOSFET ON Semiconductor
FDP3632 N-Channel MOSFET INCHANGE
FDP3651U N-Channel MOSFET INCHANGE
FDP3652 100V 61A N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDP3632 N-Channel MOSFET
FDP3651U N-Channel MOSFET
FDP3652 N-Channel MOSFET
FDP3682 N-Channel MOSFET
FDP3205 N-Channel PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDP3672 — N-Channel PowerTrench® MOSFET November 2013 FDP3672 N-Channel PowerTrench® MOSFET 105 V, 41 A, 33 mΩ Features • RDS(on) = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • QG(tot) = 28 nC ( Typ.