FDP3672
Overview
- With TO-220 packaging
- Drain Source Voltage- : VDSS ≥ 105V
- Static drain-source on-resistance: RDS(on) ≤ 33mΩ@VGS=10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | FDP3672 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 278.55 KB |
Related Datasheets
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