FDP6670AS
Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
Key Features
- 31 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
- Includes SyncFET Schottky body diode
- Low gate charge (28nC typical)
- High performance trench technology for extremely low RDS(ON) and fast switching
- High power and current handling capability DD G D S TO-220 FDP Series G S TO-263AB FDB Series G
