·
188 Hits
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Availabl...
·
103 Hits
teristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol ...
·
99 Hits
-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 30 60 3.5
Max 40 75 ...
·
90 Hits
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Availabl...
·
69 Hits
Current C
IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.01mH C
EAS
VDS Spike Power Dissipat...
·
57 Hits
28 39 62 25 3.1 2
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Cas...
·
55 Hits
on B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 24 24 80 20 15 60 2 36 ...
·
52 Hits
age Temperature Range
TJ, TSTG
Maximum -30 ±25 -34 -32.5 -136 -21 -17 39 76 30 12 5 3.2
-55 to 150
Units V V
A
A A mJ W
W °C
Thermal Characteristi...
·
49 Hits
25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Max Q1
Max Q2
30
±20 ±20
16 18
12 14
64 72
13 15
7.8...
·
39 Hits
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
Product Summary
BVDSS 30V
RDSON (VGS=10V)
1.5mΩ
ID (TC=2...
·
37 Hits
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
Product Summary
BVDSS 30V
RDSON (VGS=10V)
2.6mΩ
ID (TC=2...
·
34 Hits
cteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
t ≤ 10s Steady-State
RqJA
24 53
30 64
Maxi...
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