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AO4407A Datasheet 30v P-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4407A 30V P-Channel MOSFET General.

General Description

The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.

This device is suitable for use as a load switch or in PWM applications.

* RoHS and Halogen-Free plaint Product Summary VDS = -30V ID = -12A (VGS = -20V) RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V) 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Avalanche Current G IAR Repetitive avalanche energy L=0.3mH G EAR Power Dissipation A TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -12 -10 -60 -26 101 3.1 2.0 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State RqJA 32 60 Maximum Junction-to-Lead C Steady State RqJL 17 Max 40 75 24 Rev.11.1 March 2024 .aosmd.

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AO4407A Distributor