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AO4406 - N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

General Description

The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device makes an excellent high side switch for notebook CPU core DC-DC conversion.

Key Features

  • VDS (V) = 30V ID = 11.5A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B Maximum 30 ±12 11.5 9.6 80 25 78 3 2.1 -55 to 150 Units V V A A mJ W °C VGS TA=25°C TA=70°C ID IDM IAV B,E Avalanche Current B,E Repetitive Avalanche Energy Power Dissipation L=0.1mH TA.

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Datasheet Details

Part number AO4406
Manufacturer Alpha Industries
File Size 290.44 KB
Description N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Datasheet download datasheet AO4406 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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March 2002 AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. Features VDS (V) = 30V ID = 11.5A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B Maximum 30 ±12 11.5 9.6 80 25 78 3 2.