AO4406 - N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Alpha Industries

Part number	AO4406
Manufacturer	Alpha Industries
File Size	290.44 KB
Description	N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Datasheet	AO4406 Datasheet
Additional preview pages of the AO4406 datasheet.

The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS (V) = 30V ID = 11.5A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16.5mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B Maximum 30 ±12 11.5 9.6 80 25 78 3 2.1 -55 to 150 Units V V A A mJ W °C VGS TA=25°C TA=70°C ID IDM IAV B,E Avalanche Current B,E Repetitive Avalanche Energy Power Dissipation L=0.1mH TA.

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Published: Mar 26, 2005 |