GENERAL DESCRIPTION
FEATURES
VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 20V 20A < 5.5mΩ < 7mΩ SOIC-8 D G S ABSOLUTE MAXIMUM RATINGS
TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead C Maximum 20 ±12 20 16 140 57 162 3.1 2 -55 to 150 Units V V A A mJ W ° C VGS TA=25° C C TA=70° ID IDM IAS, IAR EAS, EAR PD TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W 1/6 Free Datasheet AO4402 20V N-Channel MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V C TJ=55° VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5...
Freescale
