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AO4404B - N-Channel MOSFET

General Description

The AO4404B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V.

This device makes an excellent high side switch for notebook CPU core DC -DC conversion.

Key Features

  • VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 8.5A < 24mΩ < 30mΩ < 48mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TA=25° C Power Dissipation B C TA=70° Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-.

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📁 Similar Datasheet

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AO4404B 30V N-Channel MOSFET Alpha & Omega Semiconductors
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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
AO4404 N-Channel MOSFET
AO4401 P-Channel MOSFET
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AO4405 P-Channel MOSFET

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4404B 30V N-Channel MOSFET General Description The AO4404B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for notebook CPU core DC -DC conversion. Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 2.5V) 30V 8.5A < 24mΩ < 30mΩ < 48mΩ D G S Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.