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AO4407 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-12 A (VGS =-20V).
  • RDS(ON) ＜ 13mΩ (VGS =-20V).
  • RDS(ON) ＜ 14mΩ (VGS =-10V).
  • RDS(ON) ＜ 30mΩ (VGS =-5V) SOP-8 D +0.04 0.21 -0.02 G S MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Avalanche energy TA=25°C TA=70°C TA=25°C TA=70°C L=0.3m.

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SMD Type P-Channel MOSFET AO4407 ■ Features ● VDS (V) =-30V ● ID =-12 A (VGS =-20V) ● RDS(ON) ＜ 13mΩ (VGS =-20V) ● RDS(ON) ＜ 14mΩ (VGS =-10V) ● RDS(ON) ＜ 30mΩ (VGS =-5V) SOP-8 D +0.04 0.21 -0.02 G S MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Avalanche energy TA=25°C TA=70°C TA=25°C TA=70°C L=0.3mH Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range t ≤ 10s Steady-State Steady-State Symbol VDS VGS ID IDM IAS,IAR PD EAS,EAR RthJA RthJC TJ Tstg Rating -30 ±25 -12 -10 -60 26 3.