Datasheet Summary
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4409 uses advanced trench technology to provide excellent RDS(ON) , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V ID = -15 A Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4.5V)
SOIC-8 Top View S S S G D D D...
