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AO4409 Datasheet P-channel MOSFET

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: AO4409 P-Channel Enhancement Mode Field Effect Transistor General.

General Description

The AO4409 uses advanced trench technology to provide excellent RDS(ON) , and ultra-low low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = -30V ID = -15 A Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4.5V) SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -15 -12.8 -80 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Charact.

AO4409 Distributor & Price

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