PAN3080L
Overview
The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge. This device is suitable for use in UPS, power switching and general purpose applications.
- VDS(max) =30V
- ID (max)=80A
- Extremely Low RDS(on): (on) = 4.0 mΩ @VGS=10 V, ID=40 A
- Good stability and uniformity
- 100% avalanche tested
- Excellent package for good heat dissipation
