PAN3080L Description
The PAN3080L is a 30V N-channel enhancement mode MOSFET which uses advanced trench technology to provide excellent RDS(on), low gate charge. This device is suitable for use in UPS, power switching and general purpose applications. PAN3080L is packaged in TO-252-2L package.
PAN3080L Key Features
- VDS(max) =30V
- ID (max)=80A
- Extremely Low RDS(on)
- Good stability and uniformity
- 100% avalanche tested
- Excellent package for good heat dissipation