Datasheet Details
| Part number | AON6380 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 427.62 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6380-AlphaOmegaSemiconductors.pdf |
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Overview: AON6380 30V N-Channel AlphaMOS General.
| Part number | AON6380 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 427.62 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6380-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 24A < 6.8mΩ < 10.5mΩ Applications • DC/DC Converters in puting • Isolated DC/DC Converters in Tele and Industrial • See Note I 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 Orderable Part Number AON6380 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.001mH C VDS Spike 10μs VGS ID IDM IDSM IAS EAS VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 24 24 88 22 17.5 60 2 36 26 10.5 5 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s 20 Maximum Junction-to-Ambient A D Steady-State RqJA 45 Maximum Junction-to-Case Steady-State RqJC 3.8 Max 25 55 4.8 Units °C/W °C/W °C/W Rev.2.1 : September 2023 .aosmd.
Page 1 of 6 AON6380 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Fo
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