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FDP7N50F - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • RDS(on) = 0.95Ω ( Typ. )@ VGS = 10V, ID = 3A.
  • Low gate charge ( Typ. 15nC).
  • Low Crss ( Typ. 6.3pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant tm.

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Datasheet Details

Part number FDP7N50F
Manufacturer Fairchild Semiconductor
File Size 567.39 KB
Description N-Channel MOSFET
Datasheet download datasheet FDP7N50F Datasheet
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FDP7N50F / FDPF7N50F N-Channel MOSFET November 2007 UniFETTM FDP7N50F / FDPF7N50F N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features • RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A • Low gate charge ( Typ. 15nC) • Low Crss ( Typ. 6.3pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
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