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FDPF12N35 - 350V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V.
  • Low gate charge ( typical 18 nC).
  • Low Crss ( typical 15 pF).
  • Fast switching.
  • Improved dv/dt capability April 2007 UniFETTM.

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Full PDF Text Transcription

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FDP12N35 / FDPF12N35 350V N-Channel MOSFET FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features • 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 15 pF) • Fast switching • Improved dv/dt capability April 2007 UniFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
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