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FDPF16N50 - MOSFET

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 380 mΩ (Max. ) @ VGS = 10 V, ID = 8 A.
  • Low Gate Charge (Typ. 32 nC).
  • Low Crss (Typ. 20 pF).
  • 100% Avalanche Tested.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDPF16N50T MOSFET
FDPF16N50U N-Channel MOSFET
FDPF16N50UT N-Channel MOSFET
FDPF10N50FT N-Channel MOSFET
FDPF10N50UT N-Channel UniFET Ultra FRFET MOSFET
FDPF10N60NZ N-Channel UniFET II MOSFET
FDPF10N60ZUT N-Channel UniFET Ultra FRFET MOSFET
FDPF12N35 350V N-Channel MOSFET
FDPF12N50 N-Channel MOSFET
FDPF12N50FT N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDPF16N50 / FDPF16N50T — N-Channel UniFETTM MOSFET FDPF16N50 / FDPF16N50T N-Channel UniFETTM MOSFET 500 V, 16 A, 380 mΩ Features • RDS(on) = 380 mΩ (Max.) @ VGS = 10 V, ID = 8 A • Low Gate Charge (Typ. 32 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.