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FDPF10N50FT - N-Channel MOSFET

Download the FDPF10N50FT datasheet PDF. This datasheet also covers the FDP10N50F variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 710 mΩ (Typ. ) @ VGS = 10 V, ID = 4.5 A.
  • Low Gate Charge (Typ. 18 nC).
  • Low Crss (Typ. 10 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDP10N50F-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDPF10N50UT N-Channel UniFET Ultra FRFET MOSFET
FDPF10N60NZ N-Channel UniFET II MOSFET
FDPF10N60ZUT N-Channel UniFET Ultra FRFET MOSFET
FDPF12N35 350V N-Channel MOSFET
FDPF12N50 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDPF10N50FT — N-Channel UniFETTM FRFET® MOSFET FDPF10N50FT N-Channel UniFETTM FRFET® MOSFET 500 V, 9 A, 850 mΩ November 2013 Features • RDS(on) = 710 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ. 10 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control.