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FDPF3N50NZ - N-Channel MOSFET

Description

UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology.

Features

  • RDS(on) = 2.1  (Typ. ) @ VGS = 10 V, ID = 1.5 A.
  • Low Gate Charge (Typ. 6.2 nC).
  • Low Crss (Typ. 2.5 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • ESD Improved Capability.
  • RoHS Compliant.

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Full PDF Text Transcription

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FDPF3N50NZ N-Channel UniFETTM II MOSFET March 2013 FDPF3N50NZ N-Channel UniFETTM II MOSFET 500 V, 3 A, 2.5  Features • RDS(on) = 2.1  (Typ.) @ VGS = 10 V, ID = 1.5 A • Low Gate Charge (Typ. 6.2 nC) • Low Crss (Typ. 2.5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Description UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress.
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