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Fairchild Semiconductor Electronic Components Datasheet

FDPF5N50FT Datasheet

N-Channel MOSFET

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FDPF5N50FT
N-Channel UniFETTM FRFET® MOSFET
500 V, 4.5 A, 1.55 Ω
November 2013
Features
• RDS(on) = 1.25 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A
• Low Gate Charge (Typ. 11 nC)
• Low Crss (Typ. 5 pF)
• 100% Avalanche Tested
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery
performance of UniFET FRFET® MOSFET has been enhanced
by lifetime control. Its trr is less than 100nsec and the reverse dv/
dt immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp
ballasts.
D
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
FDPF5N50FT
500
±30
4.5*
2.7*
18*
233
4.5
8.5
4.5
28
0.22
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF5N50FT
4.5
62.5
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FDPF5N50FT Rev. C2
1
www.fairchildsemi.com
http://www.Datasheet4U.com


Fairchild Semiconductor Electronic Components Datasheet

FDPF5N50FT Datasheet

N-Channel MOSFET

No Preview Available !

Package Marking and Ordering Information
Part Number
FDPF5N50FT
Top Mark
FDPF5N50FT
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 2.25 A
VDS = 20 V, ID = 2.25 A
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 400 V, ID = 5 A,
VGS = 10 V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250 V, ID = 5 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 4.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 5 A,
dIF/dt = 100 A/μs
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 23 mH, IAS = 4.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD 4.5 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
1.25
4.3
490
66
5
11
3
5
13
22
28
20
-
-
-
65
120
Max. Unit
-
-
10
100
±100
V
V/oC
μA
nA
5.0 V
1.55 Ω
-S
650 pF
88 pF
7.5 pF
15 nC
- nC
- nC
36 ns
54 ns
66 ns
50 ns
4.5 A
18 A
1.5 V
- ns
- nC
©2012 Fairchild Semiconductor Corporation
FDPF5N50FT Rev. C2
2
www.fairchildsemi.com
http://www.Datasheet4U.com


Part Number FDPF5N50FT
Description N-Channel MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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