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FDQ7238AS - N-Channel MOSFET

General Description

The FDQ7238AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies.

The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology.

Key Features

  • Q2: 14 A, 30V. RDS(on) = 8.7 mΩ @ VGS = 10V RDS(on) = 10.5 mΩ @ VGS = 4.5V.
  • Q1: 11 A, 30V. RDS(on) = 13.2 mΩ @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.5V SO-14 pin 1 S2 S2 S2 G1G2 Vin Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a & 1b) (Note 1c & 1d) Operating and Storage Junction Temper.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDQ7238AS May 2008 FDQ7238AS Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package General Description The FDQ7238AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology. The FDQ7238AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. Features • Q2: 14 A, 30V. RDS(on) = 8.7 mΩ @ VGS = 10V RDS(on) = 10.5 mΩ @ VGS = 4.5V • Q1: 11 A, 30V. RDS(on) = 13.2 mΩ @ VGS = 10V RDS(on) = 16 mΩ @ VGS = 4.