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Fairchild Semiconductor Electronic Components Datasheet

FDS4435BZ_F085 Datasheet

P-Channel PowerTrench MOSFET

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FDS4435BZ_F085
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m:
Features
„ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
„ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
„ Extended VGSS range (-25V) for battery applications
„ HBM ESD protection level of ±3.8KV typical (note 3)
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability
„ Termination is Lead-free and RoHS compliant
„ Qualified to AEC Q101
July 2009
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
Pin 1
SO-8
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
EAS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 4)
Ratings
-30
±25
-8.8
-50
2.5
1.0
24
-55 to +150
Units
V
V
A
W
mJ
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
25
50
°C/W
Device Marking
FDS4435BZ
Device
FDS4435BZ_F085
Package
SO-8
Reel Size
13’’
Tape Width
12mm
Quantity
2500units
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDS4435BZ_F085 Datasheet

P-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250PA, VGS = 0V
-30
ID = -250PA, referenced to 25°C
-21
VDS = -24V, VGS = 0V
VGS = ±25V, VDS = 0V
V
mV/°C
1 PA
±10 PA
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250PA
ID = -250PA, referenced to 25°C
VGS = -10V, ID = -8.8A
VGS = -4.5V, ID = -6.7A
VGS = -10V, ID = -8.8A, TJ = 125°C
VDS = -5V, ID = -8.8A
-1
-2.1
6
16
26
22
24
-3 V
mV/°C
20
35 m:
28
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -15V, VGS = 0V,
f = 1MHz
f = 1MHz
1385
275
230
4.5
1845
365
345
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -15V, ID = -8.8A,
VGS = -10V, RGEN = 6:
VGS = 0V to -10V
VGS = 0V to -5V
VDD = -15V,
ID = -8.8A
10 20 ns
6 12 ns
30 48 ns
12 22 ns
28 40 nC
16 23 nC
5.2 nC
7.4 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -8.8A (Note 2)
-0.9 -1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -8.8A, di/dt = 100A/Ps
29 44 ns
23 35 nC
NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 50°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
2
www.fairchildsemi.com


Part Number FDS4435BZ_F085
Description P-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 6 Pages
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