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FDS5692Z - N-Channel UltraFET Trench MOSFET

Key Features

  • This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
  • Max rDS(on) = 24mΩ at VGS = 10V, ID = 5.8A.
  • Max rDS(on) = 33mΩ at VGS = 4.5V, ID = 5.6A.
  • ESD protection diode (note 3).

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Full PDF Text Transcription (Reference)

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FDS5692Z N-Channel UltraFET Trench® MOSFET February 2006 FDS5692Z N-Channel UltraFET Trench® MOSFET 50V, 5.8A, 24mΩ General Description Features This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 24mΩ at VGS = 10V, ID = 5.8A „ Max rDS(on) = 33mΩ at VGS = 4.5V, ID = 5.