Fairchild Semiconductor FDS5690
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.| Part No. | FDS5690 |
|---|---|
| Datasheet | FDS5690 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V.●
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● Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
APPLICATIONS
●● DC/DC converter Motor drives D D D D 5 6 7 4 3 2 1 SO-8 S S S G 8
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings 60 (Note 1a) Units V V A W ±20 7 50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Outlines and Ordering Information Device Marking FDS5690 Device FDS5690 Reel Size 13’’ Tape Width 12mm Quantity 2500 units 2000 Fairchild Semiconductor Corporation FDS5690 Rev.
