The FDS5690 is a 60V N-Channel Power MOSFET.
| Package | SOIC |
|---|---|
| Mount Type | Surface Mount |
| Pins | 8 |
| Height | 1.5 mm |
| Length | 5 mm |
| Width | 4 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDS5690 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
Features
This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process
ON that
•
7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V
has been especially tailored to minimize on-stat.
This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process
ON that
* 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V has been especially tailored to minimize on-state RDS(on) = 0.033 Ω @ VGS = 6 V. resistance and yet maintain superior switching performance. * Low gate ch. |
| Part Number | FDS5690 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching per.
* 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V. * * * * Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications * * DC/DC converter Motor drives D D D . |
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