FDS5692Z Datasheet | Fairchild Semiconductor

FDS5692Z N-Channel UltraFET Trench® MOSFET February 2006 N-Channel UltraFET Trench® MOSFET 50V, 5.8A, 24mΩ General Description Features This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. - Max rDS(on) = 24mΩ at VGS = 10V, ID = 5.8A - Max rDS(on) = 33mΩ at VGS = 4.5V, ID = 5.6A - ESD protection diode (note 3) Applications - Low Qgd - DC/DC converter - Fast switching speed SO-8 G SS S 5 6 7 8 MOSFET Maximum Ratings TA=25oC unless otherwise...