* 23 A, 20 V. RDS(ON) RDS(ON) RDS(ON) = 3.5 mΩ @ VGS = 4.5 V = 4 mΩ @ VGS = 2.5 V = 6 mΩ @ VGS = 1.8 V
* High performance trench technology for extremely low RDS.

* Synchronous rectifier
* DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, provi.

FDS6064N3

FDS6162N3

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FDS6294

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FDS6609A