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FDS6681Z Datasheet - Fairchild Semiconductor

MOSFET

FDS6681Z Features

* 20 A,

* 30 V. RDS(ON) = 4.6 mΩ @ VGS =

* 10 V RDS(ON) = 6.5 mΩ @ VGS =

* 4.5 V

* Extended VGSS range (

* 25V) for battery applications

* HBM ESD protection level of 8kV typical (note 3)

* High performance trench technology for ext

FDS6681Z General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pac.

FDS6681Z Datasheet (217.27 KB)

Preview of FDS6681Z PDF

Datasheet Details

Part number:

FDS6681Z

Manufacturer:

Fairchild Semiconductor

File Size:

217.27 KB

Description:

Mosfet.

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FDS6681Z MOSFET Fairchild Semiconductor

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