Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH)
30 V
General Description This P- Channel MOSFET is produced using onsemi’s advanced
PowerTrench process that has been especially tailored to minimize the on- state resistance.
This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Features
- - 20 A,
- 30 V
- RDS(ON) = 4.6 mΩ @ VGS =
- 10 V
- RDS(ON) = 6.5 mΩ @ VGS =
- 4.5 V
- Extended VGSS Range (- 25 V) for Battery Applications
- HBM ESD Protection Level of 8 kV Typical (Note 3)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- Termination is Lead- free and RoHS...
