FDS6681Z
Overview
This P-Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
- -20 A, -30 V
- RDS(ON) = 4.6 mΩ @ VGS = -10 V
- RDS(ON) = 6.5 mΩ @ VGS = -4.5 V
- Extended VGSS Range (-25 V) for Battery Applications
- HBM ESD Protection Level of 8 kV Typical (Note 3)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- Termination is Lead-free and RoHS Compliant
- This is a Pb-Free and Halide Free Device
