FDS6680S
Overview
The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
- 11.5 A, 30 V. RDS(ON) = 0.011 Ω @ VGS = 10 V RDS(ON) = 0.016 Ω @ VGS = 4.5 V * *
- Includes SyncFET Schottky body diode Low gate charge (17nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability
