FDS6688 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
FDS6688 Key Features
- 16 A, 30 V. RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V
- Ultra-low gate charge (40 nC typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability