FDS6688
FDS6688 is 30V N-Channel PowerTrench MOSFET manufactured by Fairchild Semiconductor.
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
- 16 A, 30 V. RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V
- Ultra-low gate charge (40 n C typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- DC/DC converter
D D SO-8
DD D D
5 6
4 3 2 1
Pin 1 SO-8
G G S S S S S S
TA=25o C unless otherwise noted
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
Parameter
Ratings
30 ±16
(Note 1a)
Units
16 50 2.5 1.4 1.2
- 55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125...
