Datasheet4U Logo Datasheet4U.com

FDS6680 - N-Channel MOSFET

General Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 11.5 A, 30 V. RDS(ON) = 0.010 Ω @ VGS = 10 V RDS(ON) = 0.015 Ω @ VGS = 4.5 V. Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching. Low gate charge (typical Qg = 19 nC). SOT-23 SuperSOTTM-6 SuperSOTTM-.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS6680A N-Channel MOSFET ON Semiconductor
FDS6681Z 30V P-Channel MOSFET ON Semiconductor
FDS6685 P-Channel MOSFET On Semiconductor
FDS6612A N-Channel MOSFET ON Semiconductor
FDS6673BZ P-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDS6680A N-Channel MOSFET
FDS6680AS 30V N-Channel MOSFET
FDS6680S 30V N-Channel Power MOSFET
FDS6681Z MOSFET
FDS6682 30V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 11.5 A, 30 V. RDS(ON) = 0.010 Ω @ VGS = 10 V RDS(ON) = 0.015 Ω @ VGS = 4.5 V. Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching. Low gate charge (typical Qg = 19 nC).