• Part: FDS6680A
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 255.83 KB
FDS6680A Datasheet (PDF) Download
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FDS6680A

Overview

This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

  • 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V
  • Ultra-low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability