Datasheet Details
| Part number | FDS6680A |
|---|---|
| Manufacturer | onsemi |
| File Size | 255.83 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDS6680A Datasheet
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General Description
This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Key Features
- 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V.
- Ultra-low gate charge.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed (Note 1a).