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FDS6688S - 30V N-Channel PowerTrench SyncFET

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General Description

The FDS6688S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Overview

FDS6688S March 2004 FDS6688S 30V N-Channel PowerTrench SyncFET™ General.

Key Features

  • 16 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V.
  • Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching.
  • High power and current handling capability.

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