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FDS6680A - N-Channel MOSFET

General Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Key Features

  • 12.5 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.013 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D 5 4 3 2 1 S FD 0A 8 66 pin 1 6 7 SO-8 S S S G 8 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless other wise noted FDS6680A Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltag.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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June 1998 FDS6680A Single N-Channel, Logic Level, PowerTrenchTM MOSFET GeneralDescription This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 12.5 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V RDS(ON) = 0.013 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). High power and current handling capability.