FDS6681Z
Overview
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
- -20 A, -30 V. RDS(ON) = 4.6 mΩ @ VGS = -10 V RDS(ON) = 6.5 mΩ @ VGS = -4.5 V
- Extended VGSS range (-25V) for battery applications
- HBM ESD protection level of 8kV typical (note 3)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Termination is Lead-free and RoHS Compliant *
- SO-8 G SS S
