Fairchild Semiconductor FDS6685
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.| Part No. | FDS6685 |
|---|---|
| Datasheet | FDS6685 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | P-Channel Logic Level PowerTrenchTM MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● -8.8 A, -30 V. RDS(ON) = 0.020 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5 V Extended VGSS range (±25V) for battery applications. Low gate charge (19nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.●
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APPLICATIONS
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● Battery protection Load switch Motor drives D D D D 5 6 7 4 3 2 1 SO-8 S S S G 8
ABSOLUTE MAXIMUM RATINGS
Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -30 ±25 (Note 1a) Units V V A W -8.8 -50 2.5 1.2 1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Outlines and Ordering Information Device Marking FDS6685 Device FDS6685 Reel Size 13’’ Tape Width 12mm Quantity 2500 units 1999 Fairchild Semiconductor Corporation FDS6685 Rev.
