onsemi FDS6685
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).| Part No. | FDS6685 |
|---|---|
| Datasheet | FDS6685 Download |
| Manufacturer |  onsemi |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.5 V● Low gate charge (17nC typical)
APPLICATIONS
● Fast switching speed● Power management
● Load switch
● Battery protection
● High performance trench technology for extremely low RDS(ON)
● High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG
ABSOLUTE MAXIMUM RATINGS
TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6685 FDS6685 13’’ ©2001 Semiconductor Components Industries, LLC.
