FDS6900AS Description
Dual N-Ch PowerTrench® SyncFET™.
FDS6900AS Key Features
- Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 28
- Q1: Optimized for low switching losses Low Gate Charge (11nC typical) RDS(on) = 27mΩ @ VGS = 10V RDS(on) = 34mΩ @ VGS =
- 100% RG (Gate Resistance) Tested The FDS6900AS is designed to replace two single SO8 MOSFETs and Schottky diode in synch