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FDS6900AS - Dual N-Channel MOSFET

General Description

The FDS6900AS is designed to replace two single SO 8 MOSFETs and Schottky diode in synchronous dc

dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices.

channel, log

Key Features

  • Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Diode, 8.2 A, 30 V.
  • RDS(on) = 22 mW at VGS = 10 V.
  • RDS(on) = 28 mW at VGS = 4.5 V.
  • Q1: Optimized for Low Switching Losses Low Gate Charge (11 nC typical), 6.9 A, 30 V.
  • RDS(on) = 27 mW at VGS = 10 V.
  • RDS(on) = 34 mW at VGS = 4.5 V.
  • 100% RG (Gate Resistance) Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant Specifications.

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Datasheet Details

Part number FDS6900AS
Manufacturer onsemi
File Size 315.10 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDS6900AS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – Dual, N-Channel, POWERTRENCH), SyncFETt FDS6900AS, FDS6900AS-G General Description The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30 V, N−channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency. The high−side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.