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FDS6900S Datasheet Dual N-ch Powertrench Syncfet

Manufacturer: Fairchild (now onsemi)

Overview: FDS6900S January 2003 FDS6900S Dual N-Ch PowerTrench SyncFet™ General.

General Description

The FDS6900S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook puters and other battery powered electronic devices.

FDS6900S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency.

The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses.

Key Features

  • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 29mΩ @ VGS = 4.5V.
  • Q1: Optimized for low switching losses Low Gate Charge ( 8 nC typical) RDS(on) = 30mΩ @ VGS = 10V RDS(on) = 37mΩ @ VGS = 4.5V 8.2A, 30V 6.9A, 30V S1D2 D S1D2 D S1D2 D G1 D 1 2 3 Q2 Q1 8 7 6 5 Dual N-Channel SyncFet SO-8 Pin 1 SO- D1 S D1 S S S2 G2 G 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source.

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FDS6900S Distributor