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FDS6900S - Dual N-Ch PowerTrench SyncFet

General Description

The FDS6900S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices.

Key Features

  • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 29mΩ @ VGS = 4.5V.
  • Q1: Optimized for low switching losses Low Gate Charge ( 8 nC typical) RDS(on) = 30mΩ @ VGS = 10V RDS(on) = 37mΩ @ VGS = 4.5V 8.2A, 30V 6.9A, 30V S1D2 D S1D2 D S1D2 D G1 D 1 2 3 Q2 Q1 8 7 6 5 Dual N-Channel SyncFet SO-8 Pin 1 SO- D1 S D1 S S S2 G2 G 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS6900S January 2003 FDS6900S Dual N-Ch PowerTrench SyncFet™ General Description The FDS6900S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.