* 19 A, 30 V RDS(ON) = 4.8 mΩ @ VGS = 10 V RDS(ON) = 6.0 mΩ @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON)
* High power and curr.

* DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, .

The FDS7066ASN3 is designed to replace a single SO8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7066ASN3 .

FDS7066N3

FDS7066N7

FDS7066SN3

FDS7060N7

FDS7064A

FDS7064N

FDS7064SN3

FDS7079ZN3

FDS7082N3

FDS7088N3

FDS7088N7

FDS7088SN3

FDS7096N