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FDS8447 - Single N-Channel PowerTrench MOSFET

General Description

This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

DC - DC conversion D D D D SO-8 Pin 1 S S G S D D D

Key Features

  • Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A.
  • Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A.
  • Low gate charge.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability.
  • RoHS compliant tm General.

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www.DataSheet4U.com FDS8447 Single N-Channel PowerTrench® MOSFET November 2006 FDS8447 Single N-Channel PowerTrench® MOSFET 40V, 12.8A, 10.5mΩ Features „ Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A „ Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A „ Low gate charge „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ RoHS compliant tm General Description This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.