The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
FDS8447-VB
FDS8447-VB Datasheet
N-Channel 40-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40
0.014 at VGS = 10 V
0.016 at VGS = 4.5 V
ID (A)d 10 9
Qg (Typ.) 15 nC
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Trench Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS directive 2002/95/EC
APPLICATIONS • Synchronous Rectification • POL, IBC
- Secondary Side
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
40
VGS
± 20
V
TC = 25 °C
10
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
8 10.4a, b 8.
FDS8447 Datasheet
