VBsemi Electronics FDS8447
N-Channel 40V MOSFET
| Part No. | FDS8447 |
|---|---|
| Datasheet | FDS8447 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 40V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● 100 % Rg Tested
● 100 % UIS Tested
● Compliant to RoHS directive 2002/95/EC
APPLICATIONS
● Synchronous Rectification● POL, IBC - Secondary Side D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 40 VGS ± 20 V TC = 25 °C 10 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C 8 10.4a, b 8.8a, b A Pulsed Drain Current IDM 50 Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS 15 11 mJ Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 5 2.1a, b A TC = 25 °C 6 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 3.8 2.5a, b W TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c.
