Description
This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
DC - DC conversion
D D D D SO-8 Pin 1 S S G S
D D D
Features
- Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A.
- Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A.
- Low gate charge.
- High performance trench technology for extremely low rDS(on).
- High power and current handling capability.
- RoHS compliant
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General.
FDS8447 Datasheet
