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FDS86540 - N-Channel MOSFET

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General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Applications „ Primary Switch in isolated DC-DC „ Synchronous Rectifier „ Load Switch D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1) (Note 1a) Ratings 60 ±20 18 120 194 5.0 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 25 50 °C/W Device Marking FDS86540 Device FDS86540 Package SO-8 Reel Size 13’’ Tape Width 12 mm Quantity 2500 units ©2012 Fairchild Semiconductor Corporation FDS86540 Rev.

C 1 www.fairchildsemi.com FDS86540 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Vo

Overview

FDS86540 N-Channel PowerTrench® MOSFET FDS86540 N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.

Key Features

  • Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A.
  • Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A.
  • High performance trench technologh for extremely low rDS(on).
  • High power and current handing capability in a widely used surface mount package.
  • 100% UIL Tested.
  • RoHS Compliant May 2012 General.

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