FDS8840NZ Datasheet | Fairchild Semiconductor

Features - Max r DS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.6 A - Max r DS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 14.9 A - HBM ESD protection level of 6 k V typical(note 3) - High performance trench technology for extremely low r DS(on) and fast switching - High power and current handling capability - Termination is Lead-free and Ro HS pliant General Description The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. Applications - Synchronous Buck for Vcore and Server - Notebook Battery Pack - Load Switch D D D D D G S S Pin 1 S D S D S S D G SO-8 .. MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 4) (Note 1a) (Note 1b) Ratings 40 ±20 18.6 63 600 2.5 1.0 -55 to +150 Units V V A m J W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 25 50 °C/W Package Marking and Ordering Information Device Marking FDS8840NZ Device FDS8840NZ Package SO8 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2009 Fairchild Semiconductor Corporation FDS8840NZ Rev.C1 .fairchildsemi. FDS8840NZ N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 32 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 40 31 1 ±10 V m V/°C µA µA On...