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FDS8840NZ - N-Channel MOSFET

General Description

conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Key Features

  • Max rDS(on) = 4.5 mW at VGS = 10 V, ID = 18.6 A.
  • Max rDS(on) = 6.0 mW at VGS = 4.5 V, ID = 14.9 A.
  • HBM ESD Protection Level of 6 kV Typical (Note 3).
  • High Performance Trench Technology for Extremely Low rDS(on) and Fast Switching.
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Datasheet Details

Part number FDS8840NZ
Manufacturer onsemi
File Size 295.16 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS8840NZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET, N-Channel, POWERTRENCH) 40 V, 18.6 A, 4.5 mW FDS8840NZ General Description The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Features • Max rDS(on) = 4.5 mW at VGS = 10 V, ID = 18.6 A • Max rDS(on) = 6.0 mW at VGS = 4.5 V, ID = 14.9 A • HBM ESD Protection Level of 6 kV Typical (Note 3) • High Performance Trench Technology for Extremely Low rDS(on) and Fast Switching • High Power and Current Handling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Buck for Vcore and Server • Notebook Battery Pack • Load Switch www.onsemi.