FDS8840NZ - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDS8840NZ
Manufacturer	ON Semiconductor
File Size	295.16 KB
Description	N-Channel MOSFET
Datasheet	FDS8840NZ Datasheet
Additional preview pages of the FDS8840NZ datasheet.

Product details

Description

conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Features

Max rDS(on) = 4.5 mW at VGS = 10 V, ID = 18.6 A.
Max rDS(on) = 6.0 mW at VGS = 4.5 V, ID = 14.9 A.
HBM ESD Protection Level of 6 kV Typical (Note 3).
High Performance Trench Technology for Extremely Low rDS(on) and Fast Switching.
High Power and Current Handling Capability.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

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Published: Dec 25, 2023 |