FDS8840NZ Datasheet | Fairchild Semiconductor

FDS8840NZ N-Channel Power Trench® MOSFET April 2009 N-Channel PowerTrench® MOSFET 40 V, 18.6 A, 4.5 mΩ Features - Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.6 A - Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 14.9 A - HBM ESD protection level of 6 kV typical(note 3) - High performance trench technology for extremely low rDS(on) and fast switching - High power and current handling capability - Termination is Lead-free and RoHS pliant General Description The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching...