FDS89141 Datasheet - Fairchild Semiconductor

Dual N-Channel MOSFET

FDS89141 General Description

* Shielded Gate MOSFET Technology * Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A * Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used surf.

FDS89141 Datasheet (282.96 KB)

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FDS89141

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Fairchild Semiconductor

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282.96 KB

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Dual n-channel mosfet.
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 3.5 A, 62 .

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FDS89141 Dual N-Channel MOSFET Fairchild Semiconductor

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FDS89141 General Description

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