Datasheet Details
| Part number | FDS89141 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 282.96 KB |
| Description | Dual N-Channel MOSFET |
| Download | FDS89141 Download (PDF) |
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| Part number | FDS89141 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 282.96 KB |
| Description | Dual N-Channel MOSFET |
| Download | FDS89141 Download (PDF) |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching performance and ruggedness.
Applications Synchronous Rectifier Primary Switch For Bridge Topology D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 D2 5 D2 6 Q2 D1 7 Q1 D1 8 4 G2 3 S2 2 G1 1 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1b) Ratings 100 ±20 3.5 18 37 31 1.6 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 40 (Note 1a) 78 °C/W Device Marking FDS89141 Device FDS89141 Package SO-8 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units ©2010 Fairchild Semiconductor Corporation 1 FDS89141 Rev.1.2 www.fairchildsemi.com FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coeffic
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET September 2015 FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 3.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDS89141 | Dual N-Channel 100V MOSFET | VBsemi |
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