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FDS89141 Key Features

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A
  • Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used
  • 100% UIL Tested
  • RoHS pliant

Other FDS89141 Datasheets

Manufacturer Part Number Description
VBsemi Logo VBsemi FDS89141 Dual N-Channel 100V MOSFET

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FDS89141 Description

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A „ Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that...