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FDS89141 - Dual N-Channel 100V MOSFET

Datasheet Summary

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Extremely Low Qgd for Switching Losses.
  • 100 % Rg Tested.
  • 100 % Avalanche Tested.
  • Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View.

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Datasheet Details

Part number FDS89141
Manufacturer VBsemi
File Size 333.41 KB
Description Dual N-Channel 100V MOSFET
Datasheet download datasheet FDS89141 Datasheet
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FDS89141-VB FDS89141-VB Datasheet Dual N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.0360 at VGS = 10 V 0.0375 at VGS = 8 V ID (A)a 6.4 5.5 Qg (Typ.) 23 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View APPLICATIONS • Primary Side Switch D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 TC = 25 °C 6.4 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 5.1 5.
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