FDS89141 - Dual N-Channel 100V MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
Extremely Low Qgd for Switching Losses.
100 % Rg Tested.
100 % Avalanche Tested.
Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View.

FDS89141 dual n-channel 100v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	FDS89141
Manufacturer	VBsemi
File Size	333.41 KB
Description	Dual N-Channel 100V MOSFET
Datasheet	FDS89141 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FDS89141	Dual N-Channel MOSFET	Fairchild Semiconductor
FDS89161	Dual N-Channel MOSFET	Fairchild Semiconductor
FDS89161	N-Channel Enhancement MOSFET	Kexin
FDS89161LZ	Dual N-Channel MOSFET	Fairchild Semiconductor
FDS8926A	Dual N-Channel MOSFET	Fairchild Semiconductor

Other Datasheets by VBsemi

Part Number	Description
FDS8447	N-Channel 40V MOSFET
FDS3590-NL	N-Channel 100V MOSFET
FDS4435-NL	P-Channel 30V MOSFET
FDS4435BZ	P-Channel MOSFET
FDS4559-NL	Dual-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FDS89141-VB FDS89141-VB Datasheet Dual N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.0360 at VGS = 10 V 0.0375 at VGS = 8 V ID (A)a 6.4 5.5 Qg (Typ.) 23 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Switching Losses • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to RoHS Directive 2002/95/EC SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View APPLICATIONS • Primary Side Switch D1 D2 G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 TC = 25 °C 6.4 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 5.1 5.