FDS89141
FDS89141 is Dual N-Channel MOSFET manufactured by Fairchild Semiconductor.
FDS89141 Dual N-Channel Shielded Gate PowerTrench® MOSFET
September 2015
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 3.5 A, 62 mΩ
Features
General Description
- Shielded Gate MOSFET Technology
- Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A
- Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS pliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching...
