FDS89141 Description
Shielded Gate MOSFET Technology Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that...
FDS89141 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 62 mΩ at VGS = 10 V, ID = 3.5 A
- Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- 100% UIL Tested
- RoHS pliant